SI5504DC-T1 Vishay/Siliconix, SI5504DC-T1 Datasheet - Page 5

• Manufacturer Part Number: SI5504DC-T1
• Description: MOSFET 30V 3.9/2.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI5504DC-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.9 A, 2.8 A
• Resistance Drain-source Rds (on): 85 mOhms, 165 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: 1206-8 ChipFET
• Fall Time: 12 ns at N Channel, 11 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 12 ns at N Channel, 11 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 12 ns at N Channel, 14 ns at P Channel

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
10
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
0.0
0.01
0.1
0
2
1
V
10
GS
-4
0.05
= 10 V thru 7 V
Duty Cycle = 0.5
0.2
0.1
0.02
0.5
On-Resistance vs. Drain Current
V
Single Pulse
V
GS
2
DS
= 4.5 V
Output Characteristics
- Drain-to-Source Voltage (V)
1.0
I
D
- Drain Current (A)
4
1.5
10
-3
6
Normalized Thermal Transient Impedance, Junction-to-Foot
V
2.0
GS
= 10 V
5 V
4 V
3 V
8
6 V
2.5
3.0
Square Wave Pulse Duration (s)
10
10
-2
400
320
240
160
10
10
80
8
6
4
2
0
0
-1
0
0
C
rss
1
6
V
V
GS
Transfer Characteristics
DS
C
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
2
Capacitance
12
1
C
iss
Vishay Siliconix
3
T
18
C
Si5504DC
25 °C
= - 55 °C
4
www.vishay.com
24
125 °C
5
10
30
6
5