SI5504DC-T1 Vishay/Siliconix, SI5504DC-T1 Datasheet - Page 11
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SI5504DC-T1
Manufacturer Part Number
SI5504DC-T1
Description
MOSFET 30V 3.9/2.8A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI5504DC-T1.pdf
(12 pages)
Specifications of SI5504DC-T1
Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.9 A, 2.8 A
Resistance Drain-source Rds (on)
85 mOhms, 165 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
1206-8 ChipFET
Fall Time
12 ns at N Channel, 11 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
1.1 W
Rise Time
12 ns at N Channel, 11 ns at P Channel
Factory Pack Quantity
3000
Typical Turn-off Delay Time
12 ns at N Channel, 14 ns at P Channel
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5504DC-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI5504DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Application Note 826
Vishay Siliconix
®
RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET
0.093
(2.357)
0.026
0.016
0.010
(0.650)
(0.406)
(0.244)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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www.vishay.com
Document Number: 72593
2
Revision: 21-Jan-08