SI5504DC-T1 Vishay/Siliconix, SI5504DC-T1 Datasheet - Page 3

• Manufacturer Part Number: SI5504DC-T1
• Description: MOSFET 30V 3.9/2.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI5504DC-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.9 A, 2.8 A
• Resistance Drain-source Rds (on): 85 mOhms, 165 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: 1206-8 ChipFET
• Fall Time: 12 ns at N Channel, 11 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 12 ns at N Channel, 11 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 12 ns at N Channel, 14 ns at P Channel

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
0.20
0.15
0.10
0.05
0.00
10
10
V
8
6
4
2
0
8
6
4
2
0
GS
0.0
0
0
= 10 V thru 5 V
V
I
D
DS
V
= 2.9 A
GS
0.5
On-Resistance vs. Drain Current
= 15 V
= 4.5 V
1
V
2
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
1.0
I
D
- Drain Current (A)
Gate Charge
2
4
1.5
3
6
2.0
V
GS
4 V
3 V
= 10 V
4
8
2.5
3.0
5
10
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 2.9 A
1
6
= 10 V
V
V
DS
GS
Transfer Characteristics
0
T
C
J
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
- Junction Temperature (°C)
iss
25
Capacitance
12
T
2
C
25 °C
= - 125 °C
50
Vishay Siliconix
18
3
75
Si5504DC
- 55 °C
www.vishay.com
100
24
4
125
150
30
5
3