SI5504DC-T1 Vishay/Siliconix, SI5504DC-T1 Datasheet - Page 8

• Manufacturer Part Number: SI5504DC-T1
• Description: MOSFET 30V 3.9/2.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI5504DC-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.9 A, 2.8 A
• Resistance Drain-source Rds (on): 85 mOhms, 165 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: 1206-8 ChipFET
• Fall Time: 12 ns at N Channel, 11 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 12 ns at N Channel, 11 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 12 ns at N Channel, 14 ns at P Channel

1206-8 ChipFETR
Document Number: 71151
15-Jan-04
NOTES:
1.
2.
3.
4.
5.
S
All dimensions are in millimeaters.
Mold gate burrs shall not exceed 0.13 mm per side.
Leadframe to molded body offset is horizontal and vertical shall not exceed
0.08 mm.
Dimensions exclusive of mold gate burrs.
No mold flash allowed on the top and bottom lead surface.
8
1
e
7
2
D
4
6
3
b
5
4
ECN: C-03528—Rev. F, 19-Jan-04
DWG: 5547
Dim
c1
E
A
D
b
c
E
e
L
S
1
4
1.825
Min
A
1.00
0.25
2.95
1.55
0.28
0.1
2X 0.10/0.13 R
0
MILLIMETERS
E
1
E
0.65 BSC
0.55 BSC
5_Nom
Nom
0.30
0.15
3.05
1.90
1.65
−
−
−
Max
0.038
1.975
1.10
0.35
0.20
3.10
1.70
0.42
c
0.039
0.010
0.004
0.116
0.072
0.061
0.011
Min
0
INCHES
0.0256 BSC
0.022 BSC
5_Nom
Nom
0.012
0.006
0.120
0.075
0.065
L
−
−
−
x
0.0015
Max
0.043
0.014
0.008
0.122
0.078
0.067
0.017
5
4
Package Information
DETAIL X
Backside View
6
3
Vishay Siliconix
7
2
8
1
www.vishay.com
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