MT46H16M16LFBF-6 IT:A Micron Technology Inc, MT46H16M16LFBF-6 IT:A Datasheet - Page 29

• Manufacturer Part Number: MT46H16M16LFBF-6 IT:A
• Description: IC DDR SDRAM 256MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M16LFBF-6 IT:A

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant
• Other names: Q3368612

Figure 14:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Commmand
Command
READ Burst
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
Notes:
CK
CK
Bank a,
Bank a,
1. D
2. BL = 4.
3. Shown with nominal
READ
READ
Col n
Col n
T0
T0
OUT
n = data-out from column n.
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
t
AC,
D
OUT
NOP
n
NOP
T2
t
T2
DQSCK, and
29
D
n+1
T2n
T2n
OUT
D
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
t
OUT
n
n+2
256Mb: x16, x32 Mobile DDR SDRAM
NOP
NOP
T3
T3
DQSQ.
OUT
Transitioning data
D
n+1
T3n
D
T3n
n+3
OUT
OUT
D
n+2
T4
NOP
T4
NOP
OUT
D
n+3
OUT
©2005 Micron Technology, Inc. All rights reserved.
T5
NOP
T5
NOP
Don’t Care
Operations