MT46H16M16LFBF-6 IT:A Micron Technology Inc, MT46H16M16LFBF-6 IT:A Datasheet - Page 56

• Manufacturer Part Number: MT46H16M16LFBF-6 IT:A
• Description: IC DDR SDRAM 256MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M16LFBF-6 IT:A

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant
• Other names: Q3368612

Electrical Specifications
Absolute Maximum Ratings
Table 12:
Table 13:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Parameter/Condition
Supply voltage
I/O supply voltage
Address and command inputs
Input HIGH voltage
Input LOW voltage
Clock inputs (CK, CK#)
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential crossing voltage
Data inputs
DC input HIGH voltage
AC input HIGH voltage
DC input LOW voltage
AC input LOW voltage
Data outputs
DC output HIGH voltage: Logic 1 (I
DC output LOW voltage: Logic 0 (I
Leakage current
Input leakage current
Any input 0V
(All other pins not under test = 0V)
Output leakage current
(DQ are disabled; 0V
Operating temperature
Commercial
Industrial
V
Symbol
IN
V
T
V
, V
DD
STG
Absolute Maximum Ratings
Electrical Characteristics and Operating Conditions
Notes 1–5 on pages 52 and 53 apply to all parameters in this table; see other indicated notes on pages 63–65
V
≤
DD
DD
OUT
Q
V
IN
/V
≤
DD
V
≤
Q = 1.70–1.95V
DD
V
OUT
Stresses greater than those listed in Table 12 may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
≤
Parameter
V
V
Voltage on any pin relative to V
Storage temperature
V
DD
DD
DD
Q supply voltage relative to V
OL
Q)
OH
supply voltage relative to V
= 0.1mA)
= –0.1mA)
Symbol
V
V
V
V
V
V
V
ID
ID
IH
IH
V
V
56
IL
IL
V
V
V
V
I
DD
V
T
T
OZ
DD
(
(
OH
I
(
(
(
(
OL
IH
IN
IX
IL
I
A
A
DC
AC
DC
AC
DC
AC
SS
SS
Q
SS
)
)
)
)
)
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.9 ×
0.8 × V
0.4 × V
0.6 × V
0.4 × V
0.7 × V
0.8 × V
256Mb: x16, x32 Mobile DDR SDRAM
Min
–0.3
–0.3
–0.3
–0.3
1.70
1.70
–40
–1
–5
0
–
V
DD
DD
DD
DD
DD
DD
DD
Q
Q
Q
Q
Q
Q
Q
Min
–0.3
–0.3
–0.3
–55
V
0.2
V
V
V
V
V
0.6 × V
0.3 × V
0.2 × V
0.1 × V
DD
DD
DD
DD
DD
DD
Electrical Specifications
Max
×
1.95
1.95
Q
Q
Q
Q
Q
Q
+70
+85
1
5
–
V
+ 0.3
+ 0.3
+ 0.6
+ 0.6
+ 0.3
+ 0.3
DD
DD
DD
DD
DD
©2005 Micron Technology, Inc. All rights reserved.
Q
Q
Q
Q
Q
Max
+150
2.7
2.7
2.7
Unit
µA
µA
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
21, 23, 28
21, 23, 28
21, 23, 28
21, 23, 28
Unit
Notes
26, 29
26, 29
21, 28
21, 28
°C
V
V
V
8, 22
7,22
7,22
22
27
27