IS43R32800B-5BL-TR ISSI, Integrated Silicon Solution Inc, IS43R32800B-5BL-TR Datasheet - Page 31

• Manufacturer Part Number: IS43R32800B-5BL-TR
• Description: IC DDR SDRAM 256MBIT 144BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: DDR SDRAMr

Specifications of IS43R32800B-5BL-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 2.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 144-BGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 700ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: Mini BGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 400mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R32800B
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00D
03/19/08
Read I nterru pted by Bu rs t Stop
is minimum 1 CL K. A T ER M command to output disable latency is equivalent to the /CA S L atency.
As a result, RE AD to TE RM interval determines valid data length to be output. The figure below
shows examples of B L=8.
Burst read operation can be interrupted by a burst stop command(TE RM). RE AD to TE RM interval
CL=2 .0
CL=2 .5
Command
Command
Command
Command
Command
Command
DQS
DQS
DQS
DQS
/CLK
DQS
DQS
CL K
DQ
DQ
DQ
DQ
DQ
DQ
RE AD
Read Int err upted by TER M ( BL =8)
RE AD
RE AD
RE AD
RE AD
RE AD
TE RM
TE RM
TE RM
TE RM
Q0
Q0
Q0
Q1
Q1
Q1
TE RM
Q0
Q0
TE RM
Q0
Q2
Q2
Q1
Q1
Q1
Q3
Q3
Q2
Q2
Q4
Q3
Q3
Q5
Q4
Q5
31