M29W128GH70N6E NUMONYX, M29W128GH70N6E Datasheet - Page 72
M29W128GH70N6E
Manufacturer Part Number
M29W128GH70N6E
Description
IC FLASH 128MBIT 70NS 56TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W128GH70N6E.pdf
(94 pages)
Specifications of M29W128GH70N6E
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16Mx8, 8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
56-TSOP
Package
56TSOP
Cell Type
NOR
Density
128 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
128KByte x 128
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W128GH70N6E
Manufacturer:
Numonyx
Quantity:
17 280
Company:
Part Number:
M29W128GH70N6E
Manufacturer:
MICRON
Quantity:
595
Company:
Part Number:
M29W128GH70N6E
Manufacturer:
MICRON45
Quantity:
556
Part Number:
M29W128GH70N6E
Manufacturer:
ST
Quantity:
20 000
Figure 22. Reset AC waveforms (no program/erase ongoing)
Figure 23. Reset during program/erase operation AC waveforms
Table 29.
1. Only available upon customer request.
2. Sampled only, not 100% tested.
72/94
t
t
RHEL,
PHEL,
Symbol
t
t
t
PHWL
RHWL
PLYH
t
PLPX
t
t
RHGL,
PHGL,
RB
E, G, W
RP
RB
E, G,
RP
(2)
(2)
(2)
W
Reset AC characteristics
t
READ
t
Alt.
t
t
RPD
t
RH
RP
RB
Y
RP Low to read mode, during program or erase
RP pulse width
RP High to Write Enable Low, Chip Enable Low,
Output Enable Low
RP Low to standby mode, during read mode
RP Low to standby mode, during program or erase Min
RB High to Write Enable Low, Chip Enable Low,
Output Enable Low
tPLPX
tPLPX
tPHEL,
tPHWL
tPHGL
tRHEL, tRHGL, tRHWL
tPLYH
Parameter
Max
Min
Min
Min
Min
60
(1)
50
10
50
10
50
0
ns
M29W128GH,
M29W128GL
70 ns
50
10
50
10
50
0
AI11301c
80 ns
50
10
50
10
50
0
AI11300c
Unit
µs
µs
ns
µs
µs
ns