M29W128GH70N6E NUMONYX, M29W128GH70N6E Datasheet - Page 89

IC FLASH 128MBIT 70NS 56TSOP

M29W128GH70N6E

Manufacturer Part Number
M29W128GH70N6E
Description
IC FLASH 128MBIT 70NS 56TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W128GH70N6E

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16Mx8, 8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
56-TSOP
Package
56TSOP
Cell Type
NOR
Density
128 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
128KByte x 128
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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M29W128GH, M29W128GL
Extended memory block
C.2
Customer lockable extended memory block
A device where the extended memory block is customer lockable is delivered with the DQ7
bit set to ‘0’ and the extended memory block unprotected. It is up to the customer to
program and protect the extended memory block but care must be taken because the
protection of the extended memory block is not reversible.
If the device has not been shipped with the extended memory block factory protected, the
block can be protected by setting the extended memory block protection bit, DQ0, to ‘0’.
However, this bit is one-time programmable and once protected the extended memory block
cannot be unprotected.
Once the extended memory block is programmed, the Exit Extended Memory Block
command must be issued to exit the extended memory block mode and return the device to
read mode.
Table 42.
Extended memory block address and data
(1)
Address
Data
x8
x16
Factory locked
Customer lockable
000000h-0000FFh
000000h-00007Fh
Security identification number Determined by customer
1. See
Table 35: Block
addresses.
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