NAND512R3A2DZA6E NUMONYX, NAND512R3A2DZA6E Datasheet - Page 18

• Manufacturer Part Number: NAND512R3A2DZA6E
• Description: IC FLASH 512MBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND512R3A2DZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Bus operations
Table 8.
18/53
A14 - A25
Address
A9 - A25
A9 - A13
A0 - A7
A25
A8
Address definition
NAND512xxA2D
A8 is set Low or High by the 00h or
01h command, and is don’t care in
Column address
Address in block
Plane address
Block address
Page address
x16 devices
Definition
A14 - A26
A25, A26
Address
A9 - A26
A9 - A13
A0 - A7
A8
NAND512xxA2D, NAND01GxxA2C
NAND01GxxA2C
A8 is set Low or High by the 00h or
01h command, and is don’t care in
Column address
Address in block
Plane address
Block address
Page address
x16 devices
Definition