NAND512R3A2DZA6E NUMONYX, NAND512R3A2DZA6E Datasheet - Page 42

• Manufacturer Part Number: NAND512R3A2DZA6E
• Description: IC FLASH 512MBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND512R3A2DZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

DC and AC parameters
Figure 25. Read C operation, one page AC waveforms
1. A0-A7 is the address in the spare memory area, where A0-A3 are valid and A4-A7 are don’t care.
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RB
CL
I/O
AL
W
R
E
Command
Code
50h
Add. M
cycle 1
Address M Input
Add. M
cycle 2
Add. M
cycle 3
tWHALL
Add. M
cycle 4
Busy
tBHRL
NAND512xxA2D, NAND01GxxA2C
tWHBH
Last Byte or Word in Area C
Data Output from M to
Data M
tALLRL2
Data
Last
ai08035b