NAND512R3A2DZA6E NUMONYX, NAND512R3A2DZA6E Datasheet - Page 25

• Manufacturer Part Number: NAND512R3A2DZA6E
• Description: IC FLASH 512MBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND512R3A2DZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

NAND512xxA2D, NAND01GxxA2C
6.4
Table 10.
Figure 13. Copy back operation
1. The Program Confirm command (code 10h) is no more necessary on NAND512xxA2D and NAND01GxxA2C devices. It is
RB
I/O
optional and has been maintained for backward compatibility.
Read
Code
00h
Copy back program
The copy back program operation is used to copy the data stored in one page and
reprogram it in another page.
The copy back program operation does not require external memory and so the operation is
faster and more efficient because the reading and loading cycles are not required. The
operation is particularly useful when a portion of a block is updated and the rest of the block
needs to be copied to the newly assigned block.
If the copy back program operation fails an error is signalled in the status register. However
as the standard external ECC cannot be used with the copy back operation bit error due to
charge loss cannot be detected. For this reason it is recommended to limit the number of
copy back operations on the same data and or to improve the performance of the ECC.
The copy back program operation requires three steps:
1.
2.
3.
After a copy back program operation, a partial-page program is not allowed in the target
page until the block has been erased.
See
Copy back program addresses
512 Mbits
Density
1 Gbit
Figure 13
The source page must be read using the Read A command (one bus write cycle to
setup the command and then 4 bus write cycles to input the source page address).
This operation copies all 264 words/528 bytes from the page into the page buffer
When the device returns to the ready state (Ready/Busy High), the second bus write
cycle of the command is given with the 4 bus cycles to input the target page address.
Refer to
pages
The Program Confirm command (code 10h) is no more necessary on NAND512xxA2D
and NAND01GxxA2C devices. It is optional and has been maintained for backward
compatibility.
Address Inputs
Source
(Read Busy time)
Table 10
tBLBH1
for an example of the copy back operation.
for the addresses that must be the same for the source and target
Copy Back
8Ah
Code
Address Inputs
Same address for source and target pages
Target
(Program Busy time)
tBLBH2
10h
A25, A26
(1)
A25
Busy
Read Status Register
70h
Device operations
SR0
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