NAND512R3A2DZA6E NUMONYX, NAND512R3A2DZA6E Datasheet - Page 49
NAND512R3A2DZA6E
Manufacturer Part Number
NAND512R3A2DZA6E
Description
IC FLASH 512MBIT 63VFBGA
Manufacturer
NUMONYX
Specifications of NAND512R3A2DZA6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
512M (64M x 8)
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Cell Type
NAND
Density
512Mb
Access Time (max)
15us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
26b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
64M
Supply Current
15mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND512R3A2DZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
NAND512xxA2D, NAND01GxxA2C
Figure 36. VFBGA63 9 x 11 x 1.05 mm - 6 x 8 +15, 0.80 mm pitch, package outline
1. Drawing is not to scale.
E
E2
BALL "A1"
FD1
E1
A
e
SD
D2
D1
D
FD
A1
e
SE
b
FE1
A2
FE
BGA-Z75
Package mechanical
ddd
49/53