NAND08GW3F2AN6E NUMONYX, NAND08GW3F2AN6E Datasheet - Page 11

• Manufacturer Part Number: NAND08GW3F2AN6E
• Description: IC FLASH 8GBIT SLC 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3F2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

NAND08GW3F2A, NAND16GW3F2A
2
2.1
Memory array organization
The memory array is comprised of NAND structures where 32 cells are connected in series.
It is organized into blocks where each block contains 64 pages. The array is split into two
areas, the main area and the spare area. The main area of the array stores data, whereas
the spare area typically stores software flags or bad block identification.
The pages are split into a 4096-byte main area and a spare area of 128 bytes. Refer to
Figure 4: Memory array
Bad blocks
The NANDxxGW3F2A devices may contain bad blocks, where the reliability of blocks that
contain one or more invalid bits is not guaranteed. Additional bad blocks may develop during
the lifetime of the device.
The bad block information is written prior to shipping (refer to
management
Table 3: Valid blocks
both the bad blocks that are present when the device is shipped and the bad blocks that
could develop later on.
These blocks need to be managed using bad blocks management and block replacement
(refer to
Table 3.
Section 9: Software
Density of device
Valid blocks
for more details).
16 Gbits
8 Gbits
shows the minimum number of valid blocks. The values shown include
organization.
algorithms).
Minimum
4016
8032
Section 9.1: Bad block
Memory array organization
Maximum
4096
8192
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