NAND08GW3F2AN6E NUMONYX, NAND08GW3F2AN6E Datasheet - Page 53

• Manufacturer Part Number: NAND08GW3F2AN6E
• Description: IC FLASH 8GBIT SLC 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3F2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

NAND08GW3F2A, NAND16GW3F2A
Table 21.
1. ES = electronic signature.
2. t
3. WP High to W High during program/erase enable operations or WP Low to W High during program/erase disable
t
t
Symbol
t
WHWH
t
t
VHWH
VLWH
t
t
t
t
t
t
t
ALLRL1
ALLRL2
t
t
t
t
t
t
t
t
t
t
t
t
t
BLBH1
BLBH2
BLBH3
BLBH4
BLBH5
t
CLLRL
WHBH
RHQX
WHBL
WHRL
EHQZ
RHRL
EHQX
RLQX
RHQZ
RLRH
RLQV
BHRL
DZRL
ELQV
RLRL
data cycle.
operations.
WHWH
(3)
(3)
(2)
is the delay from Write Enable rising edge during the final address cycle to Write Enable rising edge during the first
symbol
t
t
t
t
t
t
t
PROG
t
RHOH
t
t
t
RLOH
t
t
RBSY
BERS
t
CBSY
t
t
Alt.
t
WHR
COH
t
t
t
RST
CLR
CHZ
CEA
REH
RHZ
t
t
REA
ADL
t
WB
AC characteristics for operations
RR
RC
t
WW
AR
RP
IR
R
Chip Enable High to Output Hold
Read Enable High to Output Hold
Read Enable Low to Output Hold (EDO mode)
Last Address latched on Data Loading time during program operations
Address Latch Low to Read Enable Low
Read Enable High to Read Enable Low
Read Enable Low to Read Enable High
Read Enable Low to Read Enable Low
Write Enable High to Ready/Busy High
Ready/Busy Low to Ready/Busy High
Read Enable Low to Output Valid
Dummy Busy time for multiplane operations
Command Latch Low to Read Enable Low
Write Enable High to Read Enable Low
Ready/Busy High to Read Enable Low
Write Enable High to Ready/Busy Low
Reset Busy time, during program
Read Enable High to Output Hi-Z
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Data Hi-Z to Read Enable Low
Reset Busy time, during ready
Reset Busy time, during erase
Reset Busy time, during read
Write protection time
Parameter
Read electronic signature
Read Enable access time
Read Enable pulse width
Read ES access time
Read Enable High hold
Program busy time
Erase busy time
Read cycle time
Read busy time
Read busy time
Read cycle
time
(1)
DC and AC parameters
Min Typ Max
100
100
10
10
20
10
10
15
15
12
25
80
70
0
5
Value
500 700
1.5
1
100
100
25
20
20
50
50
25
20
25
2
5
2
53/65
Unit
ms
ns
ns
ns
µs
µs
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns