NAND08GW3F2AN6E NUMONYX, NAND08GW3F2AN6E Datasheet - Page 18

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NAND08GW3F2AN6E

Manufacturer Part Number
NAND08GW3F2AN6E
Description
IC FLASH 8GBIT SLC 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND08GW3F2AN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
8G (1G x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-

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Part Number:
NAND08GW3F2AN6E
Manufacturer:
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0
Command set
5
18/65
Command set
All bus write operations to the device are interpreted by the command interface. The
commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the Command Latch Enable signal is High. Device operations are selected by writing
specific commands to the command register. The two-step command sequences for
program and erase operations are imposed to maximize data security.
The commands are summarized in
Table 7.
Page Read
Read for Copy Back
Read ID
Reset
Page Program
Multiplane Page Program
Multiplane Read
Copy Back Program
Multiplane Copy Back
Program
Multiplane Copy Back
Read
Block Erase
Multiplane Block Erase
Read Status Register
Random Data Input
Random Data Output
Multiplane Random Data
Output
Cache Read
End Cache Read
Page Program with
2-Kbyte compatibility
Copy Back Program with
2-Kbyte compatibility
Function
Command set
1st cycle
FFh
80h
3Fh
00h
00h
90h
80h
60h
85h
85h
60h
60h
60h
70h
85h
05h
00h
31h
80h
85h
Table 7: Command
2nd cycle
D0h
35h
10h
11h
60h
10h
60h
E0h
30h
11h
60h
05h
11h
11h
3rd cycle
D0h
E0h
81h
30h
81h
35h
80h
85h
NAND08GW3F2A, NAND16GW3F2A
set.
4th cycle
10h
10h
10h
10h
Acceptable during
command busy
Yes
Yes

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