MT46V128M4BN-6:D Micron Technology Inc, MT46V128M4BN-6:D Datasheet - Page 19

• Manufacturer Part Number: MT46V128M4BN-6:D
• Description: IC DDR SDRAM 512MBIT 6NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46V128M4BN-6:D

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (128Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 10:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN
Transmitter
Input Voltage Waveform
Notes:
1. V
2. V
3. Numbers in diagram reflect nominal values utilizing circuit below for all devices other than
-5B.
OH
OL
(MAX) with test load is 0.373V.
25Ω
(MIN) with test load is 1.927V.
V
V
V
V
VssQ
OL
TT
DD
OH
1.560V
1.400V
1.300V
1.275V
1.250V
1.225V
1.200V
1.100V
0.940V
V
25Ω
IN
Q (2.3V MIN)
System noise margin (power/ground,
crosstalk, signal integrity attenuation)
(MAX) (0.83V
(MIN) (1.670V
(
AC
between
and
) - provides margin
V
termination)
IL
(
AC
Reference
point
V
)
2
OL
1
for SSTL_2
for SSTL_2 termination)
(MAX)
19
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
512Mb: x4, x8, x16 DDR SDRAM
Receiver
©2000 Micron Technology, Inc. All rights reserved.
V
V
V
V
V
V
V
V
IH
IH
REF
REF
REF
REF
IL
IL
(
(
(
(
DC
AC
AC
DC
+ AC noise
+ DC error
- DC error
- AC noise
)
)
)
)