MT46V128M4BN-6:D Micron Technology Inc, MT46V128M4BN-6:D Datasheet - Page 70

• Manufacturer Part Number: MT46V128M4BN-6:D
• Description: IC DDR SDRAM 512MBIT 6NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46V128M4BN-6:D

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (128Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 43:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
WRITE-to-READ – Interrupting
CK
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. DI b = data-in for column b; DO n = data-out for column n.
2. An interrupted burst of 4 is shown; two data elements are written.
3. One subsequent element of data-in is applied in the programmed order following DI b.
4.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. DQS is required at T2 and T2n (nominal case) to register DM.
7. If the burst of 8 is used, DM and DQS are required at T3 and T3n because the READ com-
t
mand will not mask these two data elements.
WTR is referenced from the first positive CK edge after the last data-in pair.
DI
b
NOP
T1
DI
b
DI
b
T1n
NOP
T2
t
WTR
T2n
70
Bank a,
READ
Col n
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3n
DON’T CARE
512Mb: x4, x8, x16 DDR SDRAM
CL = 2
CL = 2
CL = 2
T4
NOP
TRANSITIONING DATA
©2000 Micron Technology, Inc. All rights reserved.
T5
NOP
DO
DO
DO
n
n
n
T5n
Operations
T6
NOP
T6n