MT46V128M4BN-6:D Micron Technology Inc, MT46V128M4BN-6:D Datasheet - Page 23

• Manufacturer Part Number: MT46V128M4BN-6:D
• Description: IC DDR SDRAM 512MBIT 6NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46V128M4BN-6:D

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (128Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN
AC Characteristics
Parameter
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ
command
Exit SELF REFRESH-to-READ command
Data valid output window (DVW)
Electrical Characteristics & Recommended AC Operating Conditions (-5B) (continued)
Notes: 1–6, 15–18, 34 apply to entire table; Notes appear on pages 28–34;
0°C ≤ T
A
≤ +70°C; V
DD
Q = +2.6V ±0.1V, V
128Mb, 256Mb, 512Mb
1Gb
DD
= +2.6V ±0.1V
23
Symbol
t
WPRES
t
t
t
t
t
WPST
XSNR
XSNR
XSRD
t
WTR
n/a
WR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
512Mb: x4, x8, x16 DDR SDRAM
Min
126
200
0.4
15
70
t
0
2
QH -
-5B
t
DQSQ
Max
0.6
–
–
–
–
–
–
©2000 Micron Technology, Inc. All rights reserved.
Units
t
t
t
ns
CK
ns
CK
ns
ns
CK
ns
Notes
21, 22
20
26