MT46V128M4BN-6:D Micron Technology Inc, MT46V128M4BN-6:D Datasheet - Page 66

• Manufacturer Part Number: MT46V128M4BN-6:D
• Description: IC DDR SDRAM 512MBIT 6NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46V128M4BN-6:D

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (128Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 38:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN
WRITE Burst
Notes:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
COMMAND
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
ADDRESS
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
DI
b
66
NOP
T1
DI
b
DON’T CARE
DI
b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T2
512Mb: x4, x8, x16 DDR SDRAM
T2n
TRANSITIONING DATA
T3
NOP
©2000 Micron Technology, Inc. All rights reserved.
Operations