MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 105

IC DDR2 SDRAM 512MBIT 5NS 60FBGA

MT47H64M8CB-5E:B

Manufacturer Part Number
MT47H64M8CB-5E:B
Description
IC DDR2 SDRAM 512MBIT 5NS 60FBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT47H64M8CB-5E:B

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (64M x 8)
Speed
5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Quantity
Price
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Quantity:
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Part Number:
MT47H64M8CB-5E:B
Manufacturer:
Micron Technology Inc
Quantity:
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Part Number:
MT47H64M8CB-5E:B TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
AC Overshoot/Undershoot Specification
Table 35:
Table 36:
Figure 80:
Figure 81:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Parameter
Parameter
Maximum peak amplitude allowed for overshoot area (see Figure 80)
Maximum peak amplitude allowed for undershoot area (see Figure 81)
Maximum overshoot area above V
Maximum undershoot area below V
Maximum peak amplitude allowed for overshoot area (see Figure 80)
Maximum peak amplitude allowed for undershoot area (see Figure 81)
Maximum overshoot area above V
Maximum undershoot area below V
Address and Control Balls
Applies to BA1–BA0, A0–A13 (A12 x16), CS#, RAS#, CAS#, WE#, CKE, ODT
Clock, Data, Strobe, and Mask Balls
Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, LDM
Overshoot
Undershoot
Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V
maximum average amplitude that is shown in Table 35 and Table 36.
V
V
V
DD
SS/
SS/
/V
V
V
SS
SS
DD
DD
DD
Q
Q
SS
SS
Q
Q (see Figure 80)
(see Figure 80)
Q (see Figure 81)
(see Figure 81)
Maximum Amplitude
Maximum Amplitude
105
AC Overshoot/Undershoot Specification
Time (ns)
Time (ns)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.33 Vns
1.33 Vns
0.38 Vns
0.38 Vns
0.50V
0.50V
0.50V
0.50V
-5E
-5E
512Mb: x4, x8, x16 DDR2 SDRAM
0.28 Vns
0.28 Vns
1.00 Vns
1.00 Vns
Undershoot Area
0.50V
0.50V
0.50V
0.50V
-37E
-37E
Specification
Specification
Overshoot Area
©2004 Micron Technology, Inc. All rights reserved.
0.23 Vns
0.23 Vns
0.80 Vns
0.80 Vns
-3/-3E
-3/-3E
0.50V
0.50V
0.50V
0.50V
-25/-25E
-25/-25E
0.66 Vns
0.66 Vns
0.19 Vns
0.19 Vns
0.50V
0.50V
0.50V
0.50V

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