MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 93

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 70:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Tangent Line for
Hold slew rate
rising signal
V
V
V
V
IL
IL
IH
IH
(
(
DC
AC
(
(
AC
DC
V
) MAX
) MAX
REF
) MIN
) MIN
V
CK#
DD
(
CK
V
DC
t
Q
SS
IH
)
=
DC to V
region
tangent line [V
REF
ΔTR
REF
(
DC
) - V
Tangent
line
t IS
93
IL
(
DC
) MAX]
t IH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ΔTR
Hold slew rate
falling signal
512Mb: x4, x8, x16 DDR2 SDRAM
Nominal line
Input Slew Rate Derating
=
tangent line [V
t IS
©2004 Micron Technology, Inc. All rights reserved.
Tangent
line
DC to V
region
ΔTF
t IH
IH
(
DC
REF
) MIN - V
ΔTF
Nominal
line
REF
(
DC
)]