MT47H64M8CB-5E:B Micron Technology Inc, MT47H64M8CB-5E:B Datasheet - Page 83

• Manufacturer Part Number: MT47H64M8CB-5E:B
• Description: IC DDR2 SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18:
Table 19:
Figure 64:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Parameter
Die Rev
Storage temperature
Operating temperature – commercial
Operating temperature – industrial
B
C
Last shrink
target
1
1
Test Point
12mm x 12.5 mm “CC” FBGA
2
Temperature Limits
Thermal Impedance
12.00
Example Temperature Test Point Location
Package
Notes:
Notes:
6.00
60-ball
84-ball
60-ball
84-ball
60-ball
84-ball
6.75
1. MAX storage case temperature; T
2. MAX operating case temperature; T
3. Device functionality is not guaranteed if the device exceeds maximum T
4. Both temperature specifications must be satisfied.
5. Operating ambient temperature surrounding the package.
1. Thermal resistance data is based on a number of samples from multiple lots and should be
2. This is an estimate; simulated number and actual results could vary.
12.50
Substrate
Figure 64. This case temperature limit is allowed to be exceeded briefly during package
reflow, as noted in Micron technical note, TN-00-15, “Recommended Soldering Parame-
ters.”
Figure 64.
viewed as a typical number.
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
Test Point
10mm x 12.5 mm “BN” FBGA
10.00
θ JA (°C/W)
Airflow =
0m/s
53.2
37.4
50.2
34.9
56.9
40.6
56.8
40.3
60.0
42.0
59.0
44.0
5.00
6.75
Symbol
T
T
12.50
AMB
83
T
T
STG
θ JA (°C/W)
C
C
Airflow =
1m/s
STG
40.0
30.9
36.8
28.0
43.6
34.1
42.8
33.2
48.0
36.0
45.0
35.0
Test Point
12mm x 10 mm “CB” FBGA
C
is measured in the center of the package, as shown in
is measured in the center of the package, as shown in
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Temperature and Thermal Impedance
Min
–55
–40
–40
0
12.00
512Mb: x4, x8, x16 DDR2 SDRAM
θ JA (°C/W)
Airflow =
2m/s
37.2
27.7
32.1
25.5
38.5
31.3
37.7
30.4
45.0
34.0
40.0
34.0
6.00
Max
100
85
95
85
5.00
10.00
θ JB (°C/W)
©2004 Micron Technology, Inc. All rights reserved.
Test Point
10mm x 10mm “B6” FBGA
27.5
24.2
24.5
21.3
30.6
27.0
24.8
23.5
32.0
29.0
27.0
26.0
Units
°C
°C
°C
°C
C
during operation.
10.00
θ JC (°C/W)
5.00
Notes
2.9
3.1
3.8
3.9
5.0
5.2
2, 3, 4
2, 3
4, 5
5.00
1
10.00