MT48H4M16LFB4-10 TR Micron Technology Inc, MT48H4M16LFB4-10 TR Datasheet - Page 36

• Manufacturer Part Number: MT48H4M16LFB4-10 TR
• Description: IC SDRAM 64MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-10 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. Violating refresh requirements during power-down may result in a loss of data.
1. CAS latency indicated in parentheses.
SYMBOL
t
t
CK (3)
CK (2)
t
t
t
t
AH
CH
AS
CL
DQML, DQMU
1
COMMAND
A0-A9, A11
Precharge all
BA0, BA1
active banks
MIN
2.5
9.6
CKE
1
3
3
8
CLK
A10
DQ
-8
High-Z
t CMS
t CKS
t AS
MAX
SINGLE BANK
PRECHARGE
ALL BANKS
100
100
BANK(S)
T0
t CMH
t CKH
t AH
MIN
2.5
9.6
Two clock cycles
12
1
3
3
All banks idle, enter
power-down mode
t CK
-10
T1
NOP
Figure 32: Power-Down Mode
MAX
100
100
t CKS
t CL
UNITS
ns
ns
ns
ns
ns
ns
T2
NOP
Input buffers gated off while in
power-down mode
t CH
36
SYMBOL
Exit power-down mode
(
(
(
(
(
(
(
)
(
)
(
)
(
)
(
)
)
t
t
(
)
)
)
)
)
(
t
t
(
)
(
(
(
(
(
(
)
)
t
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(
)
(
)
(
)
(
)
(
)
)
CMH
MRD
(
)
)
)
)
)
CKH
CMS
(
)
(
CKS
RFC
t
)
)
RP
MIN
2.5
2.5
1
80
19
1
1
2
t CKS
-8
Tn + 1
NOP
MAX
All banks idle
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
MIN
100
2.5
2.5
20
Tn + 2
1
1
2
ACTIVE
64Mb: x16
ROW
ROW
BANK
DON’T CARE
-10
MAX
UNITS
t
ns
ns
ns
ns
ns
ns
CK