MT48H4M16LFB4-10 TR Micron Technology Inc, MT48H4M16LFB4-10 TR Datasheet - Page 52

• Manufacturer Part Number: MT48H4M16LFB4-10 TR
• Description: IC SDRAM 64MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-10 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. A9 and A11 = “Don’t Care.”
2.
3. Page left open; no
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
WR must be satisfied prior to PRECHARGE command.
t
t
t
CKH
t
t
CKS
AH
CH
AS
CL
1
MIN
2.5
9.6
2.5
DQMU, DQML
1
3
3
8
1
COMMAND
A0-A9, A11
BA0, BA1
-8
CKE
A10
MAX
CLK
DQ
t
100
100
RP.
7
8
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
t CKH
MIN
t CMH
t AH
t AH
t AH
2.5
9.6
2.5
12
1
3
3
1
t RCD
-10
t CL
Figure 48: WRITE – Full-page Burst
MAX
T1
NOP
100
100
t CH
7
8
t CMS
t CK
t DS
UNITS
COLUMN m 1
D
BANK
T2
WRITE
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
IN
t CMH
m
t DH
t DS
D
IN
T3
NOP
m + 1
t DH
52
SYMBOL
t
256 (x16) locations within same row
t
t DS
WR (m)
WR (a)
t
D
t
t
t
CMH
IN
CMS
t
RCD
t
RAS
t
t
T4
NOP
DH
DS
RC
RP
m + 2
t DH
Full page completed
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DS
D
IN
1 CLK
T5
MIN
+7ns
NOP
m + 3
2.5
2.5
48
80
19
19
15
1
1
t DH
(
(
(
(
(
(
)
(
)
(
)
(
)
(
)
(
(
(
)
)
)
)
)
(
)
(
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(
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(
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(
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)
-8E
t DS
D
120,000
Tn + 1
IN
MAX
NOP
m - 1
t DH
1
Full-page burst does not
self-terminate. Can use
BURST TERMINATE
command to stop.
BURST TERM
Tn + 2
1 CLK +5ns
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
MIN
100
2.5
2.5
50
20
20
15
DON’T CARE
1
1
2, 3
Tn + 3
-10
NOP
64Mb: x16
120,000
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
–