MT48H4M16LFB4-8 IT Micron Technology Inc, MT48H4M16LFB4-8 IT Datasheet - Page 37

• Manufacturer Part Number: MT48H4M16LFB4-8 IT
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-8 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the burst length = 2, the CAS latency = 3, and auto precharge is disabled.
2. A9 and A11 = “Don’t Care.”
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
CKH
t
t
AH
CH
AS
CL
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
1
CKE
A10
CLK
DQ
MIN
2.5
9.6
t CMS
t CKS
t AS
t AS
t AS
1
3
3
8
1
COLUMN m
READ
T0
BANK
t CMH
-8
t CKH
t AH
t AH
t AH
MAX
2
100
100
7
8
t CMS
t CK
T1
NOP
t CMH
MIN
2.5
9.6
12
1
3
3
1
t CL
t CKS t CKH
-10
Figure 33: Clock Suspend Mode
T2
MAX
NOP
t LZ
100
100
t CH
7
8
t AC
UNITS
T3
ns
ns
ns
ns
ns
ns
ns
ns
ns
D
OUT
m
T4
NOP
t OH
37
t AC
D
T5
OUT
NOP
m + 1
t HZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
t
t
t
t
HZ (3)
HZ (2)
t
CMH
CMS
t
t
CKS
t
t
OH
DH
DS
LZ
T6
NOP
COLUMN e 2
t DS
MIN
BANK
WRITE
D
T7
2.5
2.5
2.5
2.5
OUT
1
1
1
t DH
e
-8
MOBILE SDRAM
MAX
©2003 Micron Technology, Inc. All rights reserved.
7
7
T8
MIN
2.5
2.5
2.5
2.5
64Mb: x16
1
1
1
D
-10
OUT
DON’T CARE
UNDEFINED
T9
NOP
e + 1
MAX
7
8
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns