MT48H4M16LFB4-8 IT Micron Technology Inc, MT48H4M16LFB4-8 IT Datasheet - Page 48

• Manufacturer Part Number: MT48H4M16LFB4-8 IT
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-8 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the burst length = 4.
2. A9 and A11 = “Don’t Care.”
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
t
CKH
t
t
CKS
AH
CH
AS
CL
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
1
CKE
A10
CLK
DQ
MIN MAX MIN
2.5
9.6
2.5
1
3
3
8
1
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
-8
T0
ROW
ROW
BANK
t CMH
t CKH
t AH
t AH
t AH
100
100
7
8
t RCD
t RAS
t RC
t CK
T1
2.5
9.6
2.5
NOP
12
1
3
3
1
Figure 44: WRITE – With Auto Precharge
-10
ENABLE AUTO PRECHARGE
MAX
t CMS
t CL
100
100
t DS
COLUMN m 2
7
8
WRITE
T2
BANK
D
IN
t CMH
t CH
t DH
m
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
IN
T4
NOP
m + 2
t DH
48
SYMBOL
t
t DS
t
WR (m)
WR (a)
t
D
t
t
t
CMH
CMS
t
IN
RCD
T5
t
RAS
t
t
NOP
DH
DS
RC
RP
m + 3
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
T6
NOP
1 CLK
+7ns
MIN
2.5
2.5
48
80
19
19
15
1
1
-8
120,000
T7
NOP
MAX
1
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
t RP
NOP
T8
1 CLK
MIN
+5ns
100
2.5
2.5
50
20
20
15
1
1
64Mb: x16
-10
DON’T CARE
ACTIVE
ROW
ROW
BANK
120,000
T9
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
–