NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 16

IC FLASH 1GBIT 48TSOP

NAND01GW4B2AN6E

Manufacturer Part Number
NAND01GW4B2AN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of NAND01GW4B2AN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (64M x 16)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GW4B2AN6E
Manufacturer:
ST
0
Memory array organization
Figure 6.
16/64
Block
Page
Memory Array Organization
2048 Bytes
Main Area
Page Buffer, 2112 Bytes
2,048 Bytes
Block = 64 Pages
Page = 2112 Bytes (2,048 + 64)
x8 DEVICES
Bytes
Bytes
64
64
8 bits
8 bits
Block
Page
1024 Words
1,024 Words
Main Area
Page Buffer, 1056 Words
Block = 64 Pages
Page = 1056 Words (1024 + 32)
x16 DEVICES
NAND01G-B, NAND02G-B
Words
Words
32
32
16 bits
16 bits
AI09854

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