NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 35

IC FLASH 1GBIT 48TSOP

NAND01GW4B2AN6E

Manufacturer Part Number
NAND01GW4B2AN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of NAND01GW4B2AN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (64M x 16)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GW4B2AN6E
Manufacturer:
ST
0
NAND01G-B, NAND02G-B
6.9
Read Electronic Signature
The device contains a Manufacturer Code and Device Code. To read these codes three steps
are required:
1.
2.
3.
Table 14.
Table 15.
NAND01GW3B
NAND01GW4B
NAND02GW3B
NAND02GW4B
NAND01GR3B
NAND01GR4B
NAND02GR3B
NAND02GR4B
Part Number
one Bus Write cycle to issue the Read Electronic Signature command (90h)
one Bus Write cycle to input the address (00h)
four Bus Read Cycles to sequentially output the data (as shown in
Signature).
I/O1-I/O0
I/O5-I/O4
I/O2
I/O3
I/O6
I/O7
I/O
Electronic Signature
Electronic Signature Byte/Word 4
Sequential Access Time
Manufacturer
Byte/Word 1
(Without Spare Area)
(Without Spare Area)
(Byte / 512 Byte)
Spare Area Size
0020h
0020h
Code
Organization
20h
20h
Block Size
Definition
Page Size
Not Used
Byte/Word 2
Device code
AAh
DAh
BAh
CAh
A1h
B1h
C1h
F1h
Value
0 0
0 1
1 0
1 1
0 0
0 1
1 0
1 1
0
1
0
1
0
1
Byte/Word 3
Reserved
80h
Reserved
Table 14: Electronic
Standard (50 ns)
Fast
Device operations
Sequential Access
Description
Spare Area size
Reserved
Reserved
Reserved
(see
Byte/Word 4
Organization
Block Size
128K
256K
Page Size
64K
X16
1K
2K
X8
16
8
Table 15
Time
(30 ns)
35/64
)

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