NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 47

• Manufacturer Part Number: NAND01GW4B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW4B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (64M x 16)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

NAND01G-B, NAND02G-B
Table 22.
1. Leakage current and standby current double in stacked devices
I
Symbol
OL
V
I
I
I
I
V
V
V
DD1
DD2
DD3
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
DC Characteristics, 1.8V Devices
Figure 22. Equivalent Testing Circuit for AC Characteristics Measurement
V
DD
Standby Current (CMOS)
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Output Low Current (RB)
Operating
Input Leakage Current
Current
Supply Voltage (Erase and
Input High Voltage
Input Low Voltage
Program lockout)
Parameter
Sequential
Program
Erase
Read
(1)
(1)
NAND Flash
(1)
V
E=V
V
OUT
Test Conditions
t
IN
C L
RLRL
I
OH
I
E=V
= 0 to V
WP=0/V
V
OL
IL,
= 0 to V
OL
I
= -100µA
GND
= 100µA
OUT
minimum
DD
= 0.1V
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
max
V DD
V
V
GND
DD
DD
Min
-0.3
3
-
-
-
-
-
-
-
-
-0.4
-0.1
2R ref
2R ref
Ai11085
DC And AC parameters
Typ
10
8
8
8
4
-
-
-
-
-
-
-
V
DD
Max
±10
±10
0.4
0.1
1.1
15
15
15
50
-
+0.3
Unit
47/64
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V