NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 52
NAND01GW4B2AN6E
Manufacturer Part Number
NAND01GW4B2AN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3A0AN6E.pdf
(64 pages)
Specifications of NAND01GW4B2AN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (64M x 16)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
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DC And AC parameters
Figure 25. Data Input Latch AC Waveforms
1. Data In Last is 2112 in x8 devices and 1056 in x16 devices.
Figure 26. Sequential Data Output after Read AC Waveforms
1. CL = Low, AL = Low, W = High.
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CL
AL
I/O
W
E
RB
I/O
E
R
(ALSetup time)
tALLWL
tBHRL
(R Accesstime)
tWLWH
tRLQV
(Data Setup time)
tDVWH
(Read Cycle time)
(R High Holdtime)
Data Out
tRHRL
tWLWL
Data In 0
tRLRL
tRLQV
(Data Hold time)
tDVWH
tWHDX
tWLWH
tRHQZ
Data Out
Data In 1
tDVWH
tWHDX
Data In
Data Out
tEHQZ
tRLQV
Last
tWLWH
NAND01G-B, NAND02G-B
tWHDX
(E Hold time)
tWHEH
tRHQZ
(CL Hold time)
tWHCLH
ai08030
ai08031