NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 24
NAND01GW4B2AN6E
Manufacturer Part Number
NAND01GW4B2AN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3A0AN6E.pdf
(64 pages)
Specifications of NAND01GW4B2AN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (64M x 16)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Device operations
Figure 7.
1. Highest address depends on device density.
24/64
RB
I/O
CL
AL
W
R
E
Read Operations
Command
Code
00h
Address Input
tBLBH1
Command
Code
30h
Busy
Data Output (sequentially)
NAND01G-B, NAND02G-B
ai08657b