M25P128-VME6TG NUMONYX, M25P128-VME6TG Datasheet - Page 12

• Manufacturer Part Number: M25P128-VME6TG
• Description: IC FLASH 128MBIT 50MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P128-VME6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN EP
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P128-VME6TGCT

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4.1
4.2
4.3
4.4
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Operating features
Page programming
To program one data byte, two instructions are required: Write Enable (WREN), which is
one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This
is followed by the internal Program cycle (of duration t
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be
programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted Bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few Bytes (see
program
characteristics for 130 nm
Sector erase and bulk erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be
achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the
entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of
duration t
The Erase instruction must be preceded by a Write Enable (WREN) instruction.
Polling during a write, program or erase cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase
(SE or BE) can be achieved by not waiting for the worst case delay (t
Write In Progress (WIP) bit is provided in the Status Register so that the application program
can monitor its value, polling it to establish when the previous Write cycle, Program cycle or
Erase cycle is complete.
Fast program/erase mode
The Fast Program/Erase mode is used to speed up programming/erasing. The device
enters the Fast Program/Erase mode during the Page Program, Sector Erase or Bulk Erase
instruction whenever a voltage equal to V
The use of the Fast Program/Erase mode requires specific operating conditions in addition
to the normal ones (V
the voltage applied to the W/V
ambient temperature, T
the cumulated time during which W/V
(PP),
SE
or t
Table 15: AC characteristics for 65 nm
BE
).
CC
must be within the normal operating range):
devices).
A
must be 25 °C ±10 °C,
PP
pin must be equal to V
PPH
PP
is at V
is applied to the W/V
PPH
PP
devices, and
should be less than 80 hours
).
PPH
(see
PP
Table 17: AC
W
Section 6.8: Page
pin.
, t
Table
PP
, t
SE
11)
, or t
BE
). The