M25P128-VME6TG NUMONYX, M25P128-VME6TG Datasheet - Page 36

• Manufacturer Part Number: M25P128-VME6TG
• Description: IC FLASH 128MBIT 50MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P128-VME6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN EP
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P128-VME6TGCT

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Table 14.
1. 65 nm process technology devices are identified by the process identification digit ‘A’ in the device marking
2. Characterized only.
Table 15.
Symbol
I
CCPP
Symbol
I
t
t
I
I
I
I
I
I
V
PP
V
CLCH
CHCL
V
I
CC1
CC3
CC4
CC5
CC6
CC7
V
and process letter "B" in the part number.
t
t
t
t
I
LO
CH
SLCH
CHSL
OH
CL
LI
OL
IH
IL
f
f
(2)
C
R
(2)
(2)
(2)
(3)
(3)
Input Leakage Current
Output Leakage Current
Standby Current
Operating Current (READ)
Operating Current (PP)
Operating Current
(WRSR)
Operating Current (SE)
Operating Current (BE)
Operating current for Fast
Program/Erase mode
V
Fast Program/Erase mode
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
PP
DC characteristics for 65 nm devices
AC characteristics for 65 nm devices
t
t
t
Alt.
Operating current in
CSS
CLH
CLL
f
C
Parameter
Clock frequency for the following
instructions: FAST_READ, PP, SE, BE,
WREN, WRDI, RDID, RDSR, WRSR
Clock frequency for READ instructions
Clock High Time
Clock Low Time
Clock Rise Time
Clock Fall Time
S Active Setup Time (relative to C)
S Not Active Hold Time (relative to C)
Test conditions specified in
Parameter
(3)
(4)
(in addition to those in
C = 0.1V
C = 0.1V
(peak to peak)
(peak to peak)
S = V
S = V
S = V
Test condition
CC
CC
CC
I
OH
I
OL
, V
CC
CC
Q = open
Q = open
/ 0.9.V
/ 0.9.V
S = V
S = V
S = V
S = V
= –100 μA
= 1.6 mA
, V
, V
IN
Table 11
= V
PP
PP
CC
CC
CC
CC
(1)
(1)
CC
CC
= V
= V
SS
at 54 MHz,
at 33 MHz,
or V
PPH
PPH
Table
and
Min.
D.C.
D.C.
0.1
0.1
CC
9
9
4
4
Table 12
11)
V
0.7 V
CC
– 0.5
Typ.
Min.
–0.2
CC
V
0.3 V
Max.
CC
Max.
54
33
100
± 2
± 2
0.4
20
20
20
20
20
20
6
4
+0.4
CC
MHz
MHz
V/ns
V/ns
Unit
ns
ns
ns
ns
Unit
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V