M25P128-VME6TG NUMONYX, M25P128-VME6TG Datasheet - Page 38

• Manufacturer Part Number: M25P128-VME6TG
• Description: IC FLASH 128MBIT 50MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P128-VME6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN EP
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P128-VME6TGCT

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7. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4, int(15.3) = 16.
Table 16.
1. Characterized only.
Symbol
I
CCPP
I
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. If only a
single byte is programmed, the estimated programming time is close to the time needed to program a full
page of 256 Bytes. Therefore, it is highly recommended to use the Page Program (PP) instruction with a
sequence of 256 consecutive Bytes. (1 ≤ n ≤ 256)
I
I
I
I
I
I
V
PP
V
V
I
CC1
CC3
CC4
CC5
CC6
CC7
V
I
LO
OH
LI
OL
IH
IL
(2)
(1)
Input Leakage Current
Output Leakage Current
Standby Current
Operating Current (READ)
Operating Current (PP)
Operating Current (WRSR)
Operating Current (SE)
Operating Current (BE)
Operating current for Fast
Program/Erase mode
V
Fast Program/Erase mode
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
PP
DC characteristics for 130 nm devices
Operating current in
Parameter
S = V
(in addition to those in
C = 0.1V
C = 0.1V
S = V
S = V
Test condition
CC
IOH
I
OL
, V
CC
CC
Table
Q = open
Q = open
S = V
S = V
S = V
S = V
50MHz,
20MHz,
CC
CC
= –100μA
, V
, V
= 1.6mA
IN
= V
/ 0.9.V
/ 0.9.V
PP
PP
CC
CC
CC
CC
11)
= V
= V
SS
or V
CC
CC
PPH
PPH
at
at
CC
V
0.7V
CC
– 0.5
Min.
–0.2
CC
V
0.3V
CC
Max.
100
± 2
± 2
0.4
20
20
20
20
20
20
8
4
+0.2
CC
Unit
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V