MCZ33883EG Freescale Semiconductor, MCZ33883EG Datasheet - Page 8

• Manufacturer Part Number: MCZ33883EG
• Description: IC PRE-DRIVER FULL BRIDGE 20SOIC
• Manufacturer: Freescale Semiconductor
• Type: High Side/Low Sider

Specifications of MCZ33883EG

• Configuration: H Bridge
• Input Type: Non-Inverting
• Delay Time: 200ns
• Current - Peak: 2A
• Number Of Configurations: 1
• Number Of Outputs: 4
• Voltage - Supply: 5.5 V ~ 55 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Rise Time: 180 ns
• Fall Time: 180 ns
• Supply Voltage (min): 5.5 V
• Supply Current: 2.2 mA
• Maximum Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Bridge Type: H Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 4. Dynamic Electrical Characteristics
Typical values noted reflect the approximate parameter means at T
8
33883
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
TIMING CHARACTERISTICS
Propagation Delay High Side and Low Side
Turn-On Rise Time
Turn-Off Fall Time
10.
11.
Characteristics noted under conditions 7.0 V ≤ V
C
C
C
LOAD
LOAD
LOAD
C
Rise time is given by time needed to change the gate from 1.0 V to 10 V (vice versa for fall time).
LOAD
= 5.0 nF, Between 50% Input to 50% Output
= 5.0 nF, 10% to 90%
= 5.0 nF, 10% to 90%
corresponds to a capacitor between GATE_HS and SRC_HS for the high side and between GATE_LS and ground for low side.
Characteristic
(10)
(10)
,
,
(11)
(11)
DYNAMIC ELECTRICAL CHARACTERISTICS
(see
(see
Figure
Figure
4)
4)
(10)
SUP
(see
≤ 18 V, -40°C ≤ T
Figure
4)
A
= 25°C under nominal conditions unless otherwise noted.
A
Symbol
≤ 125°C, GND = 0.0 V unless otherwise noted.
t
t
PD
t
R
F
Min
Analog Integrated Circuit Device Data
–
–
–
Typ
200
80
80
Freescale Semiconductor
Max
300
180
180
Unit
ns
ns
ns