ISO1H812G Infineon Technologies, ISO1H812G Datasheet - Page 16

• Manufacturer Part Number: ISO1H812G
• Description: IC SWITCH HISIDE 8CH DSO-36
• Manufacturer: Infineon Technologies
• Type: High Sider
• Series: ISOFACE™r

Specifications of ISO1H812G

• Package / Case: DSO-36
• Input Type: Serial
• Number Of Outputs: 8
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 700mA
• Current - Peak Output: 1.4A
• Voltage - Supply: 11 V ~ 35 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Product: Driver ICs - Various
• Supply Voltage (max): 6.5 V
• Supply Voltage (min): - 0.5 V
• Maximum Power Dissipation: 3.3 W
• Maximum Operating Temperature: Internally Limited
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 25 C
• Output Current: 0.625 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000413800

4.7
Parameter
at T
unless otherwise specified
Input low state voltage
(SI, DIS, CS, SCLK)
Input high state voltage
(SI, DIS, CS, SCLK)
Input voltage hysteresis
(SI, DIS, CS, SCLK)
Output low state voltage
(SO)
Output high state voltage
(SO)
Input pull down current
(SI , DIS)
Input pull up current
(CS, SCLK)
Output disable time (transition DIS to logic low)
Normal operation
Turn-off time to 10% V
R
Output disable time (transition DIS to logic low)
Disturbed operation
Turn-off time to 10% V
R
1) The time includes the turn-on/off time of the high-side switch and the transmission time via the coreless transformer.
2) If Pin DIS is set to low the outputs are set to low; after DIS set to high a new write cycle is necessary to set the output again.
3) The parameter is not subject to production test - verified by design/characterization
Datasheet
L
L
= 47
= 47
j
= -25 ... 125°C, V
Input Interface
bb
OUT
OUT
=15...30V, V
CC
= 3.0...5.5V,
1)2)3)
1)2)
Symbol
V
I
V
V
Idown
-I
V
t
t
16
V
DIS
DIS
IHys
OH
Iup
OL
IH
IL
0.75 x
0.7 x
min.
-0.3
V
-0.3
V
---
---
CC
CC
Limit Values
typ.
100
100
100
---
---
---
---
---
85
0.25 x
max.
V
V
0.3 x
V
V
170
230
0.3
0.3
CC
CC
CC
CC
+
+
Electrical Characteristics
Version 2.2, 2009-07-01
Unit Test Condition
V
mV
V
µA
µs
C
R
L
L
ISOFACE
ISO1H812G
< 50pF,
> 10k
TM