MT18LSDT6472G-13ED2 Micron Technology Inc, MT18LSDT6472G-13ED2 Datasheet - Page 12

• Manufacturer Part Number: MT18LSDT6472G-13ED2
• Description: MODULE SDRAM 512MB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18LSDT6472G-13ED2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 4831838208
• Chip Density: 256Mb
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 2.43A
• Number Of Elements: 18
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 55C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 12: I
SDRAM components only
Notes: 1, 6, 11, 13; notes appear on page 15; 0°C £ T
Table 13: I
SDRAM components only
Notes: 1, 6, 11, 13; notes appear on page 15; 0°C £ T
16,32,Meg x 64 DDR SDRAM DIMMs (Footer Desc variable)
SD18C16_32_64x72G_B.fm - Rev. B 1/03 EN
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device banks idle;
CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT CS# = HIGH;
CKE = HIGH
SELF REFRESH CURRENT: CKE £ 0.2V
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device banks idle;
CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT CS# = HIGH;
CKE = HIGH
SELF REFRESH CURRENT: CKE £ 0.2V
RC =
RC =
t
t
RC (MIN)
RC (MIN)
DD
DD
PARAMETER/CONDITION
PARAMETER/CONDITION
Specifications and Conditions (256MB)
Specifications and Conditions (512MB)
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
t
t
t
t
RFC =
RFC = 15.6 µs
RFC =
RFC = 15.6 µs
A
A
£ +70°C; V
£ +70°C; V
t
t
RFC (MIN)
RFC (MIN)
168-PIN REGISTERED SDRAM DIMM
12
128MB, 256MB, 512MB (x72, ECC)
DD
DD
= V
= V
SYMBOL
SYMBOL
I
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD 1
DD 2
DD 3
DD 4
DD 5
DD 6
DD 7
DD 1
DD 2
DD 3
DD 4
DD 5
DD 6
DD 7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q - +3.3V ±0.3V
Q - +3.3V ±0.3V
2,880
2,970
5,940
2,430
2,430
5,130
-13E
-13E
900
720
36
54
36
36
63
45
MAX
2,250
2,430
4,860
MAX
2,700
2,700
5,580
-133
-133
900
720
36
54
36
36
63
45
2,250
2,430
4,860
2,520
2,520
4,860
-10E
-10E
720
720
36
63
45
36
54
36
UNITS
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
©2003, Micron Technology Inc.
19, 30, 31
19, 30, 31
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
NOTES
NOTES
30
30
30
30
30
30
30
30
4
4