MT18LSDT6472G-13ED2 Micron Technology Inc, MT18LSDT6472G-13ED2 Datasheet - Page 13

• Manufacturer Part Number: MT18LSDT6472G-13ED2
• Description: MODULE SDRAM 512MB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18LSDT6472G-13ED2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 4831838208
• Chip Density: 256Mb
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 2.43A
• Number Of Elements: 18
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 55C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 14: CAPACITANCE (128MB, 256MB, and 512MB)
Note: 2; notes appear on page 15
Table 15: SDRAM Component Electrical Characteristics and Recommended AC
Notes: 5, 6, 8, 9, 11; notes appear on page 15
16,32,Meg x 64 DDR SDRAM DIMMs (Footer Desc variable)
SD18C16_32_64x72G_B.fm - Rev. B 1/03 EN
Access time from CLK(pos.edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out high-impedance time
Data-out low-impedance time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE to PRE CHARGE command
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (8,192 rows)
AUTO REFRESH period
PRE CHARGE command period
Input Capacitance: A0-A12, BA0, BA1, RAS#, CAS#, WE#, CKE0
Input Capacitance: S0#, S2#, DQMB0-DQMB7
Input Capacitance: CK0
Input Capacitance: SCL, SA0-SA2, SDA
Input Capacitance: CK1-CK3
Input Capacitance: REGE
Input/Output Capacitance: DQ0-DQ63, CB0-CB3, CB4-CB7
Operating Conditions
AC CHARACTERISTICS
PARAMETER
PARAMETER
CL=3
CL=2
CL=3
CL = 2
CL = 3
CL = 2
SYMBOL MIN
t
t
t
t
t
t
t
t
t
AC(3)
AC(2)
CK(3)
CK(2)
HZ(3)
HZ(2)
t
t
t
t
CMH
t
t
t
t
CKH
CMS
t
OH
t
RCD
t
t
CKS
t
RAS
t
RFC
t
t
REF
OH
AH
DH
AS
CH
DS
RC
CL
RP
LZ
N
168-PIN REGISTERED SDRAM DIMM
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
13
37
60
15
66
15
7
1
3
128MB, 256MB, 512MB (x72, ECC)
-13E
120,000
SYMBOL
MAX
5.4
5.4
5.4
5.4
64
C
C
C
C
C
C
C
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IO
I 1
I 2
I 3
I 4
I 5
I 6
MIN
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
10
44
66
20
66
20
1
3
-133
MIN
120,000
1.5
MAX
8
–
–
–
–
–
5.4
5.4
64
6
6
MIN
1.8
10
50
70
20
70
20
TYP
1
2
3
3
8
1
2
1
2
1
2
1
3
16
12
8
4
-
–
–
-10E
120,000
MAX
64
6
6
6
6
MAX
10
12
12
–
–
–
–
UNITS
©2003, Micron Technology Inc.
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNITS
pF
pF
pF
pF
pF
pF
pF
NOTES
27
23
23
10
10
28
29