HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 447

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HD64F3437TFI16V

Manufacturer Part Number
HD64F3437TFI16V
Description
MCU FLASH 60K 100-TQFP
Manufacturer
Renesas Electronics America
Datasheet

Specifications of HD64F3437TFI16V

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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19.5
Erasing and programming flash memory takes time, which can make it difficult to tune parameters
and other data in real time. If necessary, real-time updates of flash memory can be emulated by
overlapping the small-block flash-memory area with part of the RAM (H'FC00 to H'FD7F). This
RAM reassignment is performed using bits 7 and 6 of the wait-state control register (WSCR).
After a flash memory area has been overlapped by RAM, the RAM area can be accessed from two
address areas: the overlapped flash memory area, and the original RAM area (H'FC00 to H'FD7F).
Table 19.11 indicates how to reassign RAM.
Wait-State Control Register (WSCR)
Notes: *1 WSCR is initialized by a reset and in hardware standby mode. It is not initialized in
Table 19.11
Bit 7: RAMS
0
1
Bit
Initial value
Read/Write
*2 For details of WSCR settings, see section 19.2.4, Wait-State Control Register (WSCR).
Flash Memory Emulation by RAM
software standby mode.
*1
RAM Area Selection
RAMS
R/W
Bit 6: RAMO
0
1
0
1
7
0
RAM0
R/W
6
0
CKDBL
*2
R/W
RAM Area
None
H'FC80 to H'FCFF
H'FC80 to H'FD7F
H'FC00 to H'FC7F
5
0
R/W
4
0
WMS1
R/W
3
1
WMS0
ROM Area
H'0080 to H'00FF
H'0080 to H'017F
H'0000 to H'007F
R/W
2
0
WC1
R/W
1
0
WC0
R/W
0
0
415

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