HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 556

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HD64F3437TFI16V

Manufacturer Part Number
HD64F3437TFI16V
Description
MCU FLASH 60K 100-TQFP
Manufacturer
Renesas Electronics America
Datasheet

Specifications of HD64F3437TFI16V

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Notes: *1 Preprogramming (setting erase block data to all 0) is not necessary.
*2 Verify data is read in 16-bit (W) units.
*3 Set only one bit in EBR2. More than one bit cannot be set.
*4 Erasing is performed in block units. To erase a number of blocks, the individual blocks must be erased sequentially.
*5 See section 23, Electrical Characteristics, Flash Memory Characteristics, for the values of x, y, z, , , , , , and N.
Figure 21.13 Erase/Erase-Verify Flowchart (Single-Block Erase)
Increment
address
NG
NG
Set block start address to verify address
H'FF dummy write to verify address
*4
Clear ESU bit in FLMCR2
Clear SWE bit in FLMCR1
Set SWE bit in FLMCR1
Set ESU bit in FLMCR2
Clear EV bit in FLMCR1
Clear E bit in FLMCR1
Set EV bit in FLMCR1
Last address of block?
Set E bit in FLMCR1
erasing of all erase
Verify data = all 1?
Set EBR1, EBR2
Read verify data
End of erasing
Disable WDT
Enable WDT
Wait (z) ms
Wait ( ) s
Wait ( ) s
Wait (x) s
Wait (y) s
Wait ( ) s
Wait ( ) s
Wait ( ) s
blocks?
End of
n = 1
Start
OK
OK
OK
*1
NG
*5
*5
*3
*5
Start of erase
*5
Halt erase
*5
*5
*5
*5
*2
Clear SWE bit in FLMCR1
Clear EV bit in FLMCR1
Erase failure
Wait ( ) s
n
N?
OK
*5
NG
n
*5
n + 1

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