HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 494

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Prewrite Flowchart
462
(set bit block to be programmed to 1)
(flash memory latches write address
(clear bit of programmed block to 0)
Write H'00 to flash memory
Enable watchdog timer
Clear erase block register
Disable watchdog timer
Set erase block register
Select program mode
(P bit = 1 in FLMCR)
Set start address
(read data = H'00?)
and write data)
Prewrite verify
End of prewrite
Wait (t
Last address?
Wait (x) s
OK
Clear P bit
n = 1
Start
vs 1
) s
Yes
*4
*5
*3
*6
*1
*6
*2
Figure 20.10 Prewrite Flowchart
No go
No
End of
programming
Programming error
n
Notes: *1 Use a byte transfer instruction.
N?
Yes
*5
*2 Set the timer overflow interval as
*3 In prewrite-verify mode P, E, PV,
*4 Programming time x, which is
*5 t
*6 Start and last addresses shall be top
follows.
CKS2 = 0, CKS1 = 0, CKS0 = 1
and EV are all cleared to 0 and
12 V is applied to FV
data with a byte transfer instruction.
determined by the inital time
(n = 1, 2, 3, 4, 5, 6), increases in
proportion to n. Thus, set the initial
time to 15.8 s or less to make total
programming time 1 ms or less.
N:
and last addresses of the block to be
erased.
VS
1: 4 s or more
6 (set N so that total
programming time does not
exceed 1 ms)
No
Double programming time
(x
n + 1
2 x)
PP
Address + 1 Address
. Read the
n
2
n–1