HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 553

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

21.4.2
Program-Verify Mode
In program-verify mode, the data written in program mode is read to check whether it has been
correctly written in the flash memory.
After the elapse of a given programming time, the programming mode is exited (the P bit in
FLMCR1 is cleared, then the PSU bit in FLMCR2 is cleared at least ( ) s later). The watchdog
timer is cleared after the elapse of ( ) s or more, and the operating mode is switched to program-
verify mode by setting the PV bit in FLMCR1. Before reading in program-verify mode, a dummy
write of H'FF data should be made to the addresses to be read. The dummy write should be
executed after the elapse of ( ) s or more. When the flash memory is read in this state (verify data
is read in 16-bit units), the data at the latched address is read. Wait at least ( ) s after the dummy
write before performing this read operation. Next, the originally written data is compared with the
verify data, and a bit generation operation is performed for reprogram data (see figure 21.12) and
transferred to the reprogram data area. After 32 bytes of data have been verified, exit program-
verify mode, wait for at least ( ) s, then clear the SWE bit in FLMCR1. If reprogramming is
necessary, set program mode again, and repeat the program/program-verify sequence as before.
However, ensure that the program/program-verify sequence is not repeated more than (N) times on
the same bits.
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