ST10F276-6Q3 STMicroelectronics, ST10F276-6Q3 Datasheet - Page 201

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ST10F276-6Q3

Manufacturer Part Number
ST10F276-6Q3
Description
MCU 16BIT 832K FLASH 144-PQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet

Specifications of ST10F276-6Q3

Core Processor
ST10
Core Size
16-Bit
Speed
64MHz
Connectivity
ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
832KB (832K x 8)
Program Memory Type
FLASH
Ram Size
68K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
144-MQFP, 144-PQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
ST10F276E
23.8.14
Figure 54. Crystal oscillator and resonator connection diagram
Table 99.
The given values of C
printed circuit board: The negative resistance values are calculated assuming additional 5pF
to the values in the table. The crystal shunt capacitance (C
capacitance between XTAL1 and XTAL2 pins is globally assumed equal to 4pF.
The external resistance between XTAL1 and XTAL2 is not necessary, since already present
on the silicon.
32 kHz oscillator specifications
Conditions: V
Table 100. 32 kHz Oscillator specifications
1. At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started,
2. Not 100% tested, guaranteed by design characterization.
g
V
V
t
STUP32
Symbol
C
12 MHz
m32
AV32
OSC32
4 MHz
8 MHz
A
the current biasing is reduced to lower the power consumption of the system.
(pF)
Oscillator
Oscillation amplitude
Oscillation-voltage level
Oscillator start-up time
460 Ω
380 Ω
370 Ω
Negative resistance (absolute min. value @125
DD
12
= 5V ±10%, T
Parameter
(1)
C
A
ST10F276E
A
550 Ω
460 Ω
420 Ω
do not include the stray capacitance of the package and of the
Crystal
15
(2))
A
(2)
= -40 / +125°C
(2)
675 Ω
540 Ω
360 Ω
18
C
A
Start-up
Normal run
Peak to peak
Sine wave middle
Stable V
Conditions
800 Ω
640 Ω
22
-
DD
840 Ω
580 Ω
27
-
0
), the package and the stray
Min.
0.5
0.7
ST10F276E
20
Resonator
8
-
1000 Ω
o
C / V
Electrical characteristics
33
-
-
Value
DD
Typ.
1.0
0.9
31
17
1
= 4.5V)
1180 Ω
39
-
-
Max.
2.4
1.2
50
30
5
1200 Ω
201/231
47
-
-
µA/V
Unit
V
s

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