ST10F276-6Q3 STMicroelectronics, ST10F276-6Q3 Datasheet - Page 44

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ST10F276-6Q3

Manufacturer Part Number
ST10F276-6Q3
Description
MCU 16BIT 832K FLASH 144-PQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet

Specifications of ST10F276-6Q3

Core Processor
ST10
Core Size
16-Bit
Speed
64MHz
Connectivity
ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
832KB (832K x 8)
Program Memory Type
FLASH
Ram Size
68K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
144-MQFP, 144-PQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Internal Flash memory
4.6
44/231
Example 2: Enable Access and Debug Protection.
Example 3: Disable in a permanent way Access and Debug Protection.
Example 4: Enable again in a permanent way Access and Debug Protection, after having
disabled them.
Disable and re-enable of Access and Debug Protection in a permanent way (as shown by
examples 3 and 4) can be done for a maximum of 16 times.
Write operation summary
In general, each write operation is started through a sequence of three steps:
1.
2.
3.
Once selected, but not yet started, one operation can be canceled by resetting the operation
selection bit.
A summary of the available Flash Module Write Operations is shown in
Table 27.
Word Program (32-bit)
Double Word Program (64-bit)
Sector Erase
FCR0H|= 0x0100;/*Set SPR in FCR0H*/
FARL = 0xDFB8;/*Load Add of register FNVAPR0 in FARL*/
FARH = 0x000E;/*Load Add of register FNVAPR0 in FARH*/
FDR0L = 0xFFFC;/*Load Data in FDR0L*/
FCR0H|= 0x8000;/*Operation start*/
FCR0H|= 0x0100;/*Set SPR in FCR0H*/
FARL = 0xDFBC;/*Load Add of register FNVAPR1L in FARL*/
FARH = 0x000E;/*Load Add of register FNVAPR1L in FARH*/
FDR0L = 0xFFFE; /*Load Data in FDR0L for clearing PDS0*/
FCR0H|= 0x8000;/*Operation start*/
FCR0H|= 0x0100;/*Set SPR in FCR0H*/
FARL = 0xDFBC;/*Load Add register FNVAPR1H in FARL*/
FARH
FDR0H = 0xFFFE;/*Load Data in FDR0H for clearing PEN0*/
FCR0H|= 0x8000;/*Operation start*/
The first instruction is used to select the desired operation by setting its corresponding
selection bit in the Flash Control Register 0. This instruction is also used to select in
which Flash Module to apply the Write Operation (by setting/resetting bit SMOD).
The second step is the definition of the Address and Data for programming or the
Sectors or Banks to erase.
The last instruction is used to start the write operation, by setting the start bit WMS in
the FCR0.
Operation
= 0x000E;/*Load Add register FNVAPR1H in FARH*/
Flash write operations
Select bit
DWPG
WPG
SER
Address and data
FDR0L/FDR0H
FDR0L/FDR0H
FDR1L/FDR1H
FCR1L/FCR1H
FARL/FARH
FARL/FARH
Table
27.
ST10F276E
Start bit
WMS
WMS
WMS

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