EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 11

• Manufacturer Part Number: EGP20G
• Description: DIODE FAST GPP 2A 400V DO-15
• Manufacturer: Fairchild Semiconductor

Specifications of EGP20G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 2A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 50 ns
• Forward Continuous Current: 2 A @ Ta=55C
• Max Surge Current: 75 A
• Reverse Current Ir: 5 uA
• Power Dissipation: 3.15 W
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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SuperSOT™-3/SOT-23
FDN339AN
FDN371N
FDN327N
FDN335N
NDS335N
NDS331N
FDV305N
FDV303N
FDV301N
FDN337N
NDS355N
NDS351N
FDN359AN
FDN357N
NDS355AN
FDN361AN
NDS351AN
FDN372S
BSS138
FDN5630
NDS7002A
2N7002MTF
MMBF170
2N7002
FDN363N
BSS123
FDN5618P
NDS0605
NDS0610
BSS84
FDN360P
FDN358P
NDS356AP
NDS352AP
FDV304P
FDV302P
FDN304P
SuperSOT-3/SOT-23 N-Channel
SuperSOT-3/SOT-23 P-Channel
Products
Min. (V)
BV
100
100
-60
-60
-60
-50
-30
-30
-30
-30
-25
-25
-20
20
20
20
20
20
20
20
25
25
30
30
30
30
30
30
30
30
30
50
60
60
60
60
60
DSS
Config.
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.046
0.085
0.125
10V
0.06
0.16
0.04
0.24
0.17
0.08
0.1
3.5
0.1
7.5
0.2
0.3
10
10
–
–
–
–
–
–
–
–
–
–
2
5
5
6
5
–
–
–
R
DS(ON)
0.12@6V
0.35@6V
4.5V
0.035
0.065
0.125
0.125
0.052
0.05
0.07
0.07
0.11
0.16
0.22
0.45
0.06
0.09
0.15
0.25
0.05
0.23
7.5
0.2
0.3
0.5
1.1
10
20
10
–
–
–
–
4
6
3
Max (Ω) @ V
2-6
0.14@2.7V
0.21@2.7V
0.6@2.7V
1.5@2.7V
13@2.7V
5@2.7V
2.5V
0.082
0.05
0.06
0.08
0.07
0.1
0.3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Replaced by NDS355AN
Replaced by NDS351AN
1.8V
0.12
0.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
1.64
0.49
0.22
7.6
4.5
3.5
6.4
3.5
1.1
4.2
3.5
2.1
1.3
5.8
1.7
1.7
1.7
1.7
1.7
8.6
1.8
1.8
0.9
6.2
3.4
1.1
12
–
7
7
5
7
4
4
2
= 5V
I
0.115
D
0.68
0.22
0.22
0.28
0.12
0.17
0.18
0.12
0.13
0.46
0.12
2.5
1.7
1.7
1.3
0.9
2.2
2.7
1.9
1.7
1.8
1.4
2.6
1.7
0.5
1.2
1.5
1.1
0.9
2.4
3
2
1
2
(A)
MOSFETs
P
D
0.35
0.35
0.35
0.36
0.36
0.36
0.36
0.36
0.35
0.35
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.3
0.2
0.3
0.2
0.5
0.5
0.5
0.5
0.5
0.5
0.5
(W)