EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 121

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EGP20G

Manufacturer Part Number
EGP20G
Description
DIODE FAST GPP 2A 400V DO-15
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of EGP20G

Voltage - Forward (vf) (max) @ If
1.25V @ 2A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
2 A @ Ta=55C
Max Surge Current
75 A
Reverse Current Ir
5 uA
Power Dissipation
3.15 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Small Signal Transistors – RF Amplifier Transistors (Continued)
KSC388
FPNH10
MPSH10
MPSH11
BF199
KSC1393
KSC838
KSC1675
MPSH24
KSP24
MPSH34
BF240
TO-92 PNP Configuration
MPSH81
TO-92S NPN Configuration
KSC2786
KSC2669
KSC2787
Products
V
CEO
25
25
25
25
25
30
30
30
30
30
40
40
20
20
30
30
(V)
V
CBO
30
30
30
30
40
30
35
50
40
40
40
40
20
30
35
50
(V) V
EBO
4
3
3
3
4
4
4
5
4
4
4
4
3
4
4
5
(V)
Max (A)
0.05
0.05
0.05
0.05
0.05
0.02
0.03
0.05
0.05
0.05
0.05
0.05
0.02
0.03
0.05
0.1
I
C
(MHz)
1100
1100
300
650
650
650
400
100
150
400
400
500
600
400
100
150
f
T
2-116
Discrete Power Products –
Min
60
60
40
40
30
65
60
40
40
20
60
38
40
30
40
40
Max
200
180
240
240
225
240
240
240
h
@V
FE
12.5
10
10
10
10
10
12
10
10
15
10
10
12
CE
6
6
6
(V) @I
12.5
C
4
4
4
7
2
2
1
8
8
7
1
5
1
2
1
(mA)
Bipolar Transistors and JFETs
Max (V)
0.65
0.2
0.5
0.5
0.5
0.2
0.4
0.3
0.5
0.3
0.4
0.3
V
@I
CE (sat)
C
15
10
10
10
10
10
10
4
4
4
1
5
(mA) @I
B
1.5
0.4
0.4
0.4
0.5
5
1
1
1
1
1
(mA)

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