EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 98

• Manufacturer Part Number: EGP20G
• Description: DIODE FAST GPP 2A 400V DO-15
• Manufacturer: Fairchild Semiconductor

Specifications of EGP20G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 2A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 50 ns
• Forward Continuous Current: 2 A @ Ta=55C
• Max Surge Current: 75 A
• Reverse Current Ir: 5 uA
• Power Dissipation: 3.15 W
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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Small Signal Transistors – Darlington Transistors (Continued)
KSP14
MPSA13
MPSA14
BC517
KSP25
2N5307
2N5308
2N6427
2N6426
BSR50
KSP26
KSP27
MPSA27
MPSA28
MPSA29
2N7051
2N7052
TO-92 PNP Configuration
MPSA77
KSP62
KSP63
KSP64
BC516
MPSA63
MPSA64
MPSA65
KSP75
KSP76
KSP77
Products
V
CEO
100
100
100
30
30
30
40
40
40
40
40
40
45
50
60
60
80
20
30
30
30
30
30
30
40
50
60
–
(V)
V
CBO
100
100
100
30
30
30
30
40
40
40
40
40
60
50
60
60
80
60
20
30
30
40
30
30
30
40
50
60
(V)
V
EBO
10
10
10
10
10
12
12
12
12
10
10
10
12
12
12
12
10
10
10
10
10
10
10
10
10
10
10
5
(V)
Max (A)
0.5
1.2
1.2
0.5
1.2
1.2
1.2
1.2
0.5
0.5
0.8
0.8
0.8
1.5
1.5
1.2
0.5
0.5
0.5
1.2
1.2
1.2
0.5
0.5
0.5
I
–
–
1
C
20000
10000
20000
30000
10000
20000
30000
10000
10000
10000
10000
10000
10000
20000
10000
20000
30000
10000
20000
20000
10000
10000
10000
7000
1000
1000
2000
1000
Min
2-93
Discrete Power Products –
200000
300000
20000
70000
20000
20000
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
10
CE
5
5
5
2
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
5
5
5
5
5
5
(V) @I
1000
1000
C
100
100
100
100
100
100
150
100
100
100
100
100
100
100
100
100
100
100
100
100
100
20
10
20
2
2
(mA)
Bipolar Transistors and JFETs
Max (V)
1.5
1.5
1.5
1.5
1.4
1.4
1.5
1.5
1.3
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1
1
1
@I
V
CE (sat)
C
100
100
100
100
100
200
200
500
500
500
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
10
(mA) @I
0.01
B
0.1
0.1
0.1
0.1
0.2
0.2
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
10
10
(mA)