EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 15

• Manufacturer Part Number: EGP20G
• Description: DIODE FAST GPP 2A 400V DO-15
• Manufacturer: Fairchild Semiconductor

Specifications of EGP20G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 2A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 50 ns
• Forward Continuous Current: 2 A @ Ta=55C
• Max Surge Current: 75 A
• Reverse Current Ir: 5 uA
• Power Dissipation: 3.15 W
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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SuperSOT-6/TSOP-6
FDC6401N
FDC6305N
FDC637AN
FDC6303N
FDC6301N
FDC6561AN
FDC633N
FDC645N
FDC655AN
FDC653N
NDC651N
NDC7002N
FDC5612
FDC3512
FDC3601N
FDC3612
FDC2512
FDC2612
FDC6420C
FDC6327C
FDC6320C
FDC6322C
FDC6321C
FDC6432SH
FDC6333C
NDC7001C
NDC7003P
FDC5614P
FDC6506P
FDC658P
FDC654P
NDC652P
FDC6304P
FDC6302P
USB10H
FDC6312P
FDC6310P
SuperSOT-6/TSOP-6 N-Channel
SuperSOT-6/TSOP-6 Complementary N- and P-Channel
SuperSOT-6/TSOP-6 P-Channel
Products
Min. (V)
30 | –30
60 | –60
20 | -20
20 | -20
25 | -25
25 | -25
25 | -25
30 | -12
BV
100
100
150
200
-60
-60
-30
-30
-30
-30
-25
-25
-20
-20
-20
20
20
20
25
25
30
30
30
30
30
30
50
60
80
DSS
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.095 | 0.15 0.15 | 0.22
0.095
0.026
0.027
0.035
0.055
0.077
0.125
0.425
0.725
0.105
0.075
10V
0.06
0.09
2 | 5
0.17
0.05
0.11
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2
5
0.07 | 0.125
0.09 | 0.105
0.064@6V
0.088@6V
0.135@6V
0.475@6V
0.08 | 0.17
0.55@6V
0.45 | 1.1
4 | 7.5
4.5V
0.024
0.145
0.042
0.035
0.055
0.135
0.075
0.125
0.115
0.125
R
0.07
0.08
0.45
0.03
0.09
0.28
0.18
1.1
10
DS(ON)
4
–
–
–
–
7
–
2-10
Max (Ω) @ V
5@2.7V | 1.5@2.7V
5@2.7V | 13@2.7V
0.095 | 0.19
0.12 | 0.25
0.6@2.7V
1.5@2.7V
13@2.7V
5@2.7V
2.5V
0.095
0.032
0.054
0.125
0.155
0.12
0.19
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
Discrete Power Products –
0.225
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
3.25 | 2.85
0.29 | 0.23
g
1.64 | 1.1
3.3 | 3.7
2.5 | 5.7
4.7 | 4.1
1.1 | 1.6
0.49 | 1
Typ. (nC)
10.5
1.64
0.49
12.5
10.5
0.22
GS
3.3
3.5
2.1
3.7
1.6
2.3
6.2
1.1
4.4
3.7
11
13
12
10
13
14
15
9
1
8
8
8
3
= 5V
0.22 | 0.12
0.22 | 0.46
0.68 | 0.46
0.51 | 0.34
2.7 | 1.9
2.4 | 2.5
3 | 2.2
2.5 | 2
I
D
0.68
0.22
0.51
0.34
0.46
0.12
-1.9
2.7
6.2
2.5
5.2
5.5
6.3
3.2
4.3
2.6
1.4
1.1
1.8
3.6
2.4
2.3
2.2
3
5
3
1
3
4
(A)
MOSFETs
P
D
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.9
1.6
0.9
0.9
0.9
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
0.9
0.9
0.9
1.3
1.6
1.6
1.6
1.6
0.9
0.9
(W)