EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 113

• Manufacturer Part Number: EGP20G
• Description: DIODE FAST GPP 2A 400V DO-15
• Manufacturer: Fairchild Semiconductor

Specifications of EGP20G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 2A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 50 ns
• Forward Continuous Current: 2 A @ Ta=55C
• Max Surge Current: 75 A
• Reverse Current Ir: 5 uA
• Power Dissipation: 3.15 W
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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Small Signal Transistors – General Purpose Transistors (Continued)
2N3859A
KSP05
KSP8098
MPS8098
KSC1008
KSC2331
PN3568
KSD1616A
BC637
BC546
BC63916
2N4410
KSP06
MPSA06
KSP8099
BC639
2N5830
KSC1845
MPSL01
2N5550
KSC1009
2N5551
MPSA43
KSP43
KSP42
MPSA42
KSP45
2N6517
KSP44
TO-92 PNP Configuration
PN5134
PN4258
PN3640
2N5771
ST5771-1
Products
V
CEO
100
120
120
140
140
160
200
200
300
300
350
350
400
60
60
60
60
60
60
60
60
60
65
80
80
80
80
80
80
10
12
12
15
15
(V)
V
CBO
120
120
100
120
160
180
200
300
350
100
120
140
160
200
300
400
500
60
60
60
60
80
80
80
60
80
80
80
80
20
12
12
15
15
(V)
V
EBO
6
4
6
6
8
8
5
6
5
6
5
5
4
4
6
5
5
5
5
6
8
6
6
6
6
6
6
6
6
3
4
4
4
4
(V)
Max (A)
0.05
0.5
0.5
0.5
0.5
0.7
0.7
0.1
0.2
0.5
0.5
0.5
0.2
0.2
0.6
0.7
0.6
0.2
0.5
0.5
0.5
0.3
0.5
0.3
0.5
0.2
0.2
0.2
0.2
I
1
1
1
–
1
C
Min
100
100
100
135
110
100
100
100
200
50
40
40
40
40
60
50
40
80
50
60
40
80
50
40
40
40
50
30
50
20
30
30
50
30
2-108
Discrete Power Products –
Max
1200
200
300
300
400
240
120
400
160
800
250
400
300
160
500
300
250
400
250
200
200
200
200
150
120
120
120
150
–
–
–
–
–
–
h
FE
@V
0.3
0.3
0.3
10
10
10
10
10
10
10
CE
1
1
5
5
2
2
1
2
2
5
2
1
1
1
5
2
5
6
5
5
2
5
1
3
(V) @I
C
150
100
150
150
100
150
10
10
50
50
10
10
10
10
10
50
10
30
30
30
30
10
30
10
10
10
10
10
10
1
1
2
1
1
(mA)
Bipolar Transistors and JFETs
Max (V)
0.25
0.25
0.25
0.25
0.25
0.25
0.75
0.75
0.25
0.4
0.4
0.4
0.7
0.3
0.5
0.6
0.5
0.2
0.4
0.5
0.3
0.3
0.7
0.2
0.4
0.5
0.5
0.5
0.5
0.6
0.6
0.6
–
1
@I
V
CE (sat)
1000
C
100
100
100
500
500
150
500
100
500
100
100
100
500
200
50
10
50
50
50
20
20
20
20
50
50
50
10
50
50
50
50
–
1
(mA) @I
B
0.1
10
50
50
15
50
50
50
10
10
50
20
–
5
5
5
5
5
1
5
5
5
2
2
2
2
5
5
5
1
5
5
5
5
(mA)